New research led by the University of Bristol could bring futuristic 6G applications like self-driving cars and instant remote healthcare diagnostics closer to reality. The study, published in the journal Nature Electronics, details a radical breakthrough in semiconductor technology designed to handle the vast volumes of data required for next-generation networks.
Futuristic concepts such as remote surgery, virtual classrooms, and advanced industrial automation rely on the ability to transfer data much faster than existing networks allow. This research develops an innovative way to accelerate this process, paving the way for 6G.
The challenge of 6G technology
The shift from 5G to 6G requires a significant upgrade of semiconductor technology. Key components, specifically the radio frequency amplifiers made from Gallium Nitride (GaN), need to be much faster, emit greater power, and be more reliable to handle the demands of 6G.
“Within the next decade, previously almost unimaginable technologies to transform a wide range of human experiences could be widely available. The possible benefits are also far-reaching, including advances in healthcare with remote diagnostics and surgery, virtual classrooms and even virtual holiday tourism.”
said co-lead author Martin Kuball, Professor of Physics at the University of Bristol.
A new architecture for semiconductor amplifiers
The international team of scientists and engineers tested a new architecture that pushes the performance of these GaN amplifiers to unprecedented levels. They achieved this by discovering a “latch-effect” in GaN that unlocked much greater radio frequency device performance.
The new technology, called superlattice castellated field effect transistors (SLCFETs), uses more than 1,000 parallel channels, or “fins,” with a width under 100 nanometers to drive the current. While these devices had demonstrated the highest performance in the W-band frequency range (75-110 GHz), the physics behind this performance was previously unknown.
“We recognised it was a latch-effect in GaN, which enables the high radio frequency performance.”
explained Dr. Akhil Shaji, Honorary Research Associate at the University of Bristol.
Using ultra-precision electrical measurements and optical microscopy, the researchers pinpointed that this effect occurred in the widest of the more than 1,000 fins. This finding was further verified with a 3D simulation model.
Reliability and future applications
A critical part of the research was to study the reliability of this latch-effect for practical applications. Rigorous testing over a long duration showed that the effect has no detrimental impact on the device’s reliability or performance. The researchers found that a thin layer of dielectric coating around each fin was a key factor in this stability.
The main conclusion was that the latch-effect can be exploited for countless practical applications, helping to transform daily life in the coming years. The next steps for the research include further increasing the power density the devices can deliver and working with industry partners to bring these next-generation devices to the commercial market.
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